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Physics

© H. Raguet/CNRS Photothèque
Albert Fert, 2007 Nobel Prize in physics, spintronics pioneer.
In the main hall of the steel and glass building, large posters are proudly displayed. “Albert, have you seen your ‘totem poles’ in the hall? How do you like your picture?” jokes Frédéric Nguyen Van Dau, director of the Unité Mixte de Physique CNRS/Thales1 that moved into its new location in Palaiseau two years ago. The person to whom Nguyen Van Dau is speaking to is Albert Fert. And the posters that bear his portrait celebrate the 2007 Nobel Prize in physics that Fert has just been awarded.2 Inundated with congratulatory messages, the prize-winner is still spending a lot of time explaining his discovery: the giant magnetoresistance effect (GMR), which makes it possible to control the motion of electrons in magnetic metals like iron or nickel, not by acting on their charge–as in conventional electronics–but on their spin. The spin is a kind of “compass needle” linked to the direction of rotation of the electron. “Basically, it’s a magnetic moment,” Fert explains, mimicking rotations with his hands. The whiteboard in his office is covered with drawings of magnetic multilayers called “sandwiches,” which are the essential requirement for GMR to work well. “It is the direction of an electron’s spin, whether it corresponds or not to the magnetic orientation of the layer, that determines if the electron will pass through the layer or not,” Fert continues.

© H. Raguet/CNRS Photothèque
Molecular beam epitaxy reactor. Heated at around 1300°C under vacuum, a metal is vaporized inside the chamber and then distills on the substrate to very slowly form a metal layer. When this layer reaches the right thickness–just a few atoms in height–a new metal is vaporized to grow a different layer. This method has been used to manufacture the first multilayers of iron and chromium, leading to the discovery of GMR.
First proposed as early as 1970 by the results of Fert’s doctoral thesis, it nonetheless took quite some time before the GMR effect was actually discovered. This only happened when the researchers managed to obtain layers that were sufficiently thin–i.e., just a few nanometers thick, the mere equivalent of ten atoms or so. Next door, Cyrile Deranlot, a CNRS engineer, shows us something that resembles a large stainless steel pressure cooker covered with pipes with viewing ports (see photo). “This is the machine we used to make them,” he proudly explains. It is the partnership between Fert’s lab and the company Thomson-CSF (now Thales), which had already mastered such nanometer-scale technologies, that led to the discovery of GMR in 1988. They managed to produce magnetic multilayers whose electrical resistance–their ability to transmit electric current–can be made to vary considerably depending on their magnetic configuration. This makes them objects that can detect very weak magnetic fields, such as those that are generated by the magnets encoding the information bits on a computer’s hard disks. Highly sensitive, yet taking up a minimum amount of space, GMR revolutionized hard disk storage capacity. “It increased a hundredfold thanks to this technology, which has been used since 1997, and is now found in every computer,” Fert points out.
This discovery launched the development of spintronics, a new kind of electronics, which has continued to break new ground ever since. For instance, Agnès Barthélémy, a professor at Paris-Sud University, has been working on other types of magnetic nanostructures in which some metallic layers are replaced by insulating ones. In these conditions, at the nanometer scale, classical mechanics gives way to quantum mechanics and its singular laws. “Actually, there is a non-zero probability that electrons can cross this insulating ‘wall’: This is the tunnel effect–in other words, the property of a quantum object that enables it to cross a potential barrier. This is impossible in classical mechanics, and we call these alternating layers a ‘tunnel junction,’” Barthélémy explains. Magnetoresistance records have been broken in the lab using tunnel junctions based on magnetic oxides.3 Unfortunately, this currently only works well at extremely low temperatures–around
-270°C. If it can be made to work at room temperature, this fundamental research could lead to the Holy Grail of tomorrow’s computer technology: a genuine nanometer-scale electrical switch. This may provide an elegant solution to compete with silicon transistors, which will reach their minimal size limit in less than a decade–thus putting an end to any further miniaturization and to the possibility of packing a greater number of them into microprocessors.

Detail of a pulsar laser deposition reactor used to grow magnetic heterostructures.
1. Associated to Université Paris-Sud, in Orsay.
2. Together with the German scientist Pr. Peter Grünberg, researcher at the Research Institute for Solid State research (in Jülich, Germany) for the same discovery, simultaneously and independently from Albert Fert's team.
3. Chemical compounds based on oxygen, frequently crystalline, the best-known of which is ordinary rust.
Unité Mixte de Physique CNRS/Thales, Palaiseau.
Albert Fert,
albert.fert@thalesgroup.com
Frédéric Nguyen Van Dau,
frederic.vandau@thalesgroup.com
Cyrile Deranlot,
cyrile.deranlot@thalesgroup.com
Agnès Barthélémy,
agnes.barthelemy@thalesgroup.com
Vincent Cros,
vincent.cros@thalesgroup.com
Javier Briatico,
javier.briatico@thalesgroup.com
Jean-Claude Mage,
jean-claude.mage@thalesgroup.com